Conference
Error-Correcting Codes for Rank Modulation
Abstract
We investigate error-correcting codes for a novel storage technology for flash memories, the rank-modulation scheme. In this scheme, a set of $n$ cells stores information in the permutation induced by the different charge levels of the individual cells. The resulting scheme eliminates the need for discrete cell levels, overcomes overshoot errors when programming cells (a serious problem that reduces the writing speed), and mitigates the problem …
Authors
Jiang A; Schwartz M; Bruck J
Pagination
pp. 1736-1740
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
July 1, 2008
DOI
10.1109/isit.2008.4595285
Name of conference
2008 IEEE International Symposium on Information Theory