High Energy Passively Q-Switched Laser on a CMOS Platform

High energy Q-switched lasers are highly desirable for various applications ranging from sensing, micro machining and medical applications especially in the long wavelength window $(> 1.8\upmu \mathrm{m})$. Such lasers are usually based on large benchtop solid-state or fibre systems. Integrated rare-earth doped medium [1]–[5] has been an excellent candidate for high energy pulse generation with high beam quality. In this work, we show CMOS …