Tunable Hybrid Plasmonic-Semiconductor Laser Incorporating ENZ Material

In this paper, we suggest a new approach to achieve tunability in semiconductor lasers, based on mode loss perturbation. We propose a hybrid plasmonic-semiconductor laser, in which we add a metal oxide semiconductor (MOS) on top of a conventional Fabry-Perot (FP) InP-based diode laser. This hybrid laser experiences significant change in the imaginary part of the mode effective index when the MOS operates in the accumulation region, which constitutes the basis of our tuning mechanism.