Journal article
Loss Modeling and Testing of 800-V DC Bus IGBT and SiC Traction Inverter Modules
Abstract
This article investigates efficiency gains achieved using an 800-V dc bus and wide bandgap silicon carbide (SiC) semiconductors for a light-duty electric vehicle (EV), rather than an insulated-gate bipolar transistor (IGBT) inverter with a 400-V bus as is commonly used for EVs. Analytical inverter loss models with 600- and 1200-V IGBTs, and 1200-V hybrid SiC and 1200-V All-SiC semiconductors are incorporated into a Chevrolet Bolt EV model and …
Authors
Allca-Pekarovic A; Kollmeyer PJ; Reimers J; Mahvelatishamsabadi P; Mirfakhrai T; Naghshtabrizi P; Emadi A
Journal
IEEE Transactions on Transportation Electrification, Vol. 10, No. 2, pp. 2923–2935
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
June 1, 2024
DOI
10.1109/tte.2023.3300669
ISSN
2577-4212