Optical reflectivity studies of GaN and AlN chemical beam epitaxy on GaAs(100)

The deposition of gallium nitride and aluminium nitride thin films on GaAs(100) substrates by chemical beam epitaxy is reported. In-situ dynamic optical reflectivity has been used to compare growth rates of the nitride layers as a function of substrate temperature with their arsenide analogues. The relative growth efficiency of gallium nitride/gallium arsenide from triethyl gallium was found to be in the range 75–85%. The growth temperature for …