Metalorganic molecular beam epitaxy of GaN and Al(Ga)N on GaAs(001) studied using laser reflectometry and reflectance anisotropy spectroscopy
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Overview
status
publication date
- 1999
has subject area
- 0906 Electrical and Electronic Engineering (FoR)
- 0912 Materials Engineering (FoR)
- Applied Physics (Science Metrix)