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Isolator-free Integration of C-band InAs-InP...
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Isolator-free Integration of C-band InAs-InP Quantum Dash Buried Heterostructure Lasers with Silicon Waveguides

Abstract

An InAs-on-InP quantum dash buried heterostructure laser and silicon chip optimized for mutual integration by direct facet-to-facet coupling have achieved -1.2 dB coupling efficiency, with coupled laser RIN of -150 dB/Hz and 152 kHz linewidth.

Authors

Schmid JH; Rahim M; Pakulski G; Vachon M; Janz S; Cheben P; Xu D-X; Poole PJ; Barrios P; Jiang W

Publication date

March 30, 2020

DOI

10.48550/arxiv.2005.00335

Preprint server

arXiv

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