A versatile Monte Carlo package for computation of efficiencies of Si(Li), SDD and Ge detectors

AbstractCurrently, most detector efficiency calculations for X‐ray detectors assume that the source is a point source on the axis of symmetry of the detector, but this is not always accurate. We have devised a Monte Carlo program to simulate photon transport in Si(Li), SDD and planar Ge detectors that natively handles finite, tilted and off‐axis sources. Although electron transport is not handled at this stage, photon transport is completely handled, including absorption from filters and multiple scattering in the detector crystal. The K escape peak is handled for both silicon and germanium detectors, and the L escape peak is also handled for germanium detectors. Our efficiency results compare very well with previous work when idealized systems are simulated, and the effect of a non‐idealized system is presented. Escape peak intensity ratios are given for both silicon detectors (K peak only) and germanium detectors (K and L peaks), and the results for the K escape peaks agree well with previous work. Results are presented for a recent annular detector system, which is a good example of systems that are poorly handled under previous efficiency calculations. Copyright © 2010 John Wiley & Sons, Ltd.

A versatile Monte Carlo package for computation of efficiencies of Si(Li), SDD and Ge detectors Journal Articles