Fully CMOS-Compatible Integrated Distributed Feedback Laser with 250 °C Fabricated Al2O3:Er3+ Gain Medium

We demonstrate a DFB laser with a record low temperature (250 °C) fabrication process of low-loss (<0.1 dB/cm) amorphous Al2O3:Er³⁺ gain medium by utilizing the substrate bias, facilitating laser integration in a fully CMOS-compatible platform.