Droplet contact angle controlling the morphology and crystal phase of GaAs and GaP nanowires

We discuss the droplet contact angle as the key parameter influencing the morphology and the related crystal phase of vapor-liquid-solid III-V nanowires. In particular, we show that twinning superlattice Te-doped GaAs nanowires are formed only when the droplet contact angle is above 130°, and that pure wurtzite sections in self-catalyzed GaP nanowires are obtained in the stage of Ga droplet consumption when the contact angle is within the range from 95° to 105°.