Annealing of Grown-in Defects in Gaas Journal Articles

abstract

• ABSTRACTDetailed analyses of positron lifetimes in GaAs have shown that an omnipresent type of defect acts as a shallow positron trap. This trap modifies the experimentally determined bulk lifetime to higher values and also influences the trapping rate into deep traps such as vacancies. It is suggested that the shallow trap likely is associated with boron. An annealing stage around 450°C is found.

authors

• Dannefaer, S
• Mascher, Peter
• Kerr, D

status

• published 

publication date

• 1987

published in

• Materials Research Society Symposium - Proceedings  Journal

keywords

• 34 Chemical Sciences
• 3403 Macromolecular and Materials Chemistry
• 40 Engineering
• 4016 Materials Engineering
• 4018 Nanotechnology

Digital Object Identifier (DOI)

• 10.1557/proc-104-471

start page

• 471

volume

• 104