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Compact Modeling of OTFTs Bias Dependent...
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Compact Modeling of OTFTs Bias Dependent Capacitance

Abstract

We have presented compact OTFT charge and capacitance models, with analytical expressions for the terminal charges and transcapacitances. The models are physically-based and consistent with the channel current model previously developed. The capacitance model assumes quasi-statical operation and is valid at medium frequencies. Frequency dispersion effects will be incorporated to this model in the near future.

Authors

Castro-Carranza A; Estrada M; Cerdeira A; Nolasco JC; Deen J; Picos R; Iñiguez B; Pallarès J

Pagination

pp. 1-22

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

January 1, 2009

DOI

10.1109/ctft.2009.5379876

Name of conference

2009 Compact Thin-Film Transistor Modeling for Circuit Simulation
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