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A Novel 2T2R CR-based TCAM Design for High-speed...
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A Novel 2T2R CR-based TCAM Design for High-speed and Energy-efficient Applications

Abstract

A 2T2R current race (CR) based ternary content addressable memory (TCAM) design is proposed using resistive random-access memory (RRAM) technology. The suggested design adopts a match-line (ML) booster feature in sensing amplifier to improve search speed and tolerance to RRAM switching variations. An SR-latch cascading scheme is presented to further improve the speed and energy efficiency for large TCAM array. Additionally, a same clock phase cascading scheme is proposed to reduce latency in cascading structure, by placing evaluation phase of all stages in the same clock phase. With the suggested ML booster, our 64-bit 1-stage design has speed and energy consumption matching the best performance reported by other emerging non-volatile memory (eNVM) based TCAM design. Our 128-bit 2-stage design also has comparable speed and energy to SRAM-based TCAM design with significantly more compact size (90% reduction) and non-volatility.

Authors

Pan K; Tosson AMS; Wang N; Zhou NY; Wei L

Pagination

pp. 33-38

Publisher

Association for Computing Machinery (ACM)

Publication Date

June 6, 2022

DOI

10.1145/3526241.3530336

Name of conference

Proceedings of the Great Lakes Symposium on VLSI 2022

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