The white organic light-emitting diodes (WOLED) using, phosphorescent dopant, iridium (III) bis[(4,6-di-fluorophenyl)-pyridinato-N, C2] picolinate (Firpic) and fluorescent dopant, 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyliul-olidyl-9-enyl)-4H-pyran (DCJTB) were fabricated by employing two different types of inducer-layer such as N, N’-dicarbazoly-3,5-benzene (mCP) and 4,7-diphenyl-1,10- phenanthroline (Bphen). Luminous efficiency, max luminance, and Commission Internationale de l'Eclairage (CIEx, y) coordinates of the WOLED using Bphen as inducer layer were 8.72 cd/A at 5.61mA/cm2, CIEx, y(x=0.27, Y=0.37) at 11.11mA/cm2, and 12330cd/m2 at 205.82mA/cm2, respectively. These results demonstrated that Bphen attributed hole-electron recombination zone controlling electron injection through 3.2eV lowest unoccupied molecular orbital (LUMO) energy level and hole blocking by 6.4eV highest occupied molecular orbital (HOMO) energy level.