(Invited) on-Chip and Silicon-Compatible Er-Doped Aluminum Oxide Lasers Academic Article uri icon

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abstract

  • Erbium-doped lasers provide high power, narrow linewidth and thermally stable emission in the important 1.5-µm eye-safe and telecommunications band. By integrating such lasers on a chip we can realize cost-effective, compact and highly robust devices compared to fiber-based platforms. Furthermore, using a silicon-compatible fabrication approach allows for co-integration with silicon electronic/photonic devices and will open new applications for compact microsystems. The presentation will cover our work on silicon-based erbium-doped aluminum oxide lasers (Al2O3:Er3+). Al2O3:Er3+  has recently received significant attention because of its broad emission, reduced clustering, and higher index, thus potential for more compact devices, compared to Er-doped silica. This has led to numerous demonstrations of amplification and lasing on chips using Al2O3:Er3+ as monolithic gain medium. As an important step towards silicon compatibility and exploiting wafer-scale lithography methods for high resolution cavity features, we have developed a silicon nitride-based Al2O3:Er3+ platform. Using such an approach, we have demonstrated a number of on-chip lasers, including distributed feedback, distributed Bragg reflector and microcavity devices. The talk will cover critical materials and design considerations towards realizing high performance lasers, including the influence of ion-ion clustering in the Al2O3 host, nanoscale film-thickness non-uniformities, and cavity Q factor optimization.

authors

  • Bradley, Jonathan
  • Purnawirman, Purnawirman
  • Shah Hosseini, Ehsan
  • Su, Zhan
  • Magden, E Salih
  • Li, Nanxi
  • Singh, Gurpreet
  • Sun, Jie
  • Adam, Thomas N
  • Leake, Gerald
  • Coolbaugh, Douglas
  • Watts, Michael R

publication date

  • April 1, 2016