Direct calculation of the MOSFET high frequency noise parameters

This paper presents for the first time a method to directly calculate the noise parameters (minimum noise figure NFmin, equivalent noise resistance Rn, and optimized source resistance Ropt and reactance Xopt) of MOSFETs based on HSPICE level 3 model. All physically-based high frequency noise sources - thermal noise from the channel, gate, source and drain resistances, induced gate noise and their correlations are considered, and the impact of …