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Low-frequency noise and random telegraph noise in...
Conference

Low-frequency noise and random telegraph noise in SiGe:C heterojunction bipolar transistors: impact of carbon concentration

Authors

Raoult J; Delseny C; Pascal F; Marin M; Deen MJ

Volume

6600

Publisher

SPIE, the international society for optics and photonics

Publication Date

June 7, 2007

DOI

10.1117/12.724559

Name of conference

Noise and Fluctuations in Circuits, Devices, and Materials

Conference proceedings

Proceedings of SPIE--the International Society for Optical Engineering

ISSN

0277-786X
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