Conference
Extraction of the Induced Gate Noise, Channel Thermal Noise and Their Correlation in Sub-Micron MOSFETs from RF Noise Measurements
Abstract
An extraction method to obtain the induced gate noise $(i_{g}i_{g}{^{\ast}})$, channel thermal noise $(i_{d}i_{d}{^{\ast}})$ and their cross-correlation $(i_{g}i_{d}{^{\ast}})$ in submicron MOSFETs directly from scattering and RF noise parameter measurements is presented and experimentally verified. In addition, the extracted induced gate noise, channel thermal noise and their correlation versus frequency, bias condition and channel length are …
Authors
Chen C-H; Deen MJ; Matloubian M; Cheng Y
Pagination
pp. 131-135
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
January 1, 2001
DOI
10.1109/icmts.2001.928651
Name of conference
ICMTS 2001. Proceedings of the 2001 International Conference on Microelectronic Test Structures (Cat. No.01CH37153)