Extraction of the Induced Gate Noise, Channel Thermal Noise and Their Correlation in Sub-Micron MOSFETs from RF Noise Measurements

An extraction method to obtain the induced gate noise $(i_{g}i_{g}{^{\ast}})$, channel thermal noise $(i_{d}i_{d}{^{\ast}})$ and their cross-correlation $(i_{g}i_{d}{^{\ast}})$ in submicron MOSFETs directly from scattering and RF noise parameter measurements is presented and experimentally verified. In addition, the extracted induced gate noise, channel thermal noise and their correlation versus frequency, bias condition and channel length are presented.