Conference
DC and Thermal Noise Modeling of 20 nm Double-Gate Junctionless MOSFETs
Abstract
Junctionless field-effect transistors (FETs) are now actively pursued as a future silicon transistor technology because of its good scalability, excellent electrical performance and relatively simple structure. There has been much research and technology development in JL FETs, their modeling, including some compact modeling, but relatively little work in modeling both noise and static characteristics. In this paper, we present an improved dc …
Authors
Jeong E-Y; Jeong Y-H; Chen C-H; Deen MJ
Pagination
pp. 1-4
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
June 1, 2013
DOI
10.1109/icnf.2013.6578976
Name of conference
2013 22nd International Conference on Noise and Fluctuations (ICNF)