Conference
Physical DC and thermal noise models of 18 nm double-gate junctionless p-type MOSFETs for low noise RF applications
Abstract
In this paper, we describe an improved DC model for double-gate junctionless p-type MOSFET (pMOSFETs) that includes field-dependent mobility and doping-dependent diffusivity, using a modified Einstein’s relation for heavily doped semiconductors. The suggested new model was calibrated with experimental data. We also demonstrated a new noise model valid for all bias regions, as well as the calculated results for channel thermal noise and induced …
Authors
Jeong E-Y; Deen MJ; Chen C-H; Baek R-H; Lee J-S; Jeong Y-H
Volume
54
Publisher
IOP Publishing
Publication Date
April 1, 2015
DOI
10.7567/jjap.54.04dc08
Conference proceedings
Japanese Journal of Applied Physics
Issue
4S
ISSN
0021-4922