Low-Frequency Noise in Bilayer MoS2 Transistor

Low-frequency noise is a significant limitation on the performance of nanoscale electronic devices. This limitation is especially important for devices based on two-dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDs), which have atomically thin bodies and, hence, are severely affected by surface contaminants. Here, we investigate the low-frequency noise of transistors based on molybdenum disulfide (MoS2), …