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Local Electronic Structure of Defects in GaN From...
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Local Electronic Structure of Defects in GaN From Spatially Resolved Electron Energy-Loss Spectroscopy

Abstract

The optical properties and their modification by crystal defects of wurtzite GaN are investigated using spatially resolved electron energy-loss spectroscopy (EELS) in a dedicated ultra-high vacuum field emission gun scanning transmission electron microscope. The calculated density of states of the bulk crystal reproduces well the features of the measured spectra. The profound effect of a prismatic stacking fault on the local electronic …

Authors

Natusch MKH; Botton GA; Broom RF; Brown PD; Tricker DM; Humphreys CJ

Volume

482

Pagination

pp. 784-789

Publisher

Springer Nature

Publication Date

1997

DOI

10.1557/proc-482-763

Conference proceedings

MRS Advances

Issue

1

ISSN

2731-5894