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Electron beam damage in titanium dioxide films
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Electron beam damage in titanium dioxide films

Abstract

Single electron transistors are destined to be one of the most attractive candidates in the future for high density integrated circuits because of their low power consumption. Recently, it has been shown that room temperature single electron transistors can be fabricated by nano-oxidation process of titanium using a scanning tunneling microscope (Matsumoto et al. 1996). In the present study, nano-reduction processes in amorphous TiOx and crystalline TiO2 under an intense nanometer-sized electron probe will be discussed. It is observed that crystalline TiO2 is more amenable to electron beam damage than amorphous TiOx, contrary to what is observed in many crystalline oxides and fluorides.

Authors

Saifullah MSM; Boothroyd CB; Botton GA; Humphreys CJ

Pagination

pp. 167-170

Publisher

Taylor & Francis

Publication Date

January 5, 2022

DOI

10.1201/9781003063056-43
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