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Controlling Electron Overflow in Phosphor-Free...
Journal article

Controlling Electron Overflow in Phosphor-Free InGaN/GaN Nanowire White Light-Emitting Diodes

Abstract

We have investigated for the first time the impact of electron overflow on the performance of nanowire light-emitting diodes (LEDs) operating in the entire visible spectral range, wherein intrinsic white light emission is achieved from self-organized InGaN quantum dots embedded in defect-free GaN nanowires on a single chip. Through detailed temperature-dependent electroluminescence and simulation studies, it is revealed that electron leakage …

Authors

Nguyen HPT; Cui K; Zhang S; Djavid M; Korinek A; Botton GA; Mi Z

Journal

Nano Letters, Vol. 12, No. 3, pp. 1317–1323

Publisher

American Chemical Society (ACS)

Publication Date

March 14, 2012

DOI

10.1021/nl203860b

ISSN

1530-6984