Journal article
Controlling Electron Overflow in Phosphor-Free InGaN/GaN Nanowire White Light-Emitting Diodes
Abstract
We have investigated for the first time the impact of electron overflow on the performance of nanowire light-emitting diodes (LEDs) operating in the entire visible spectral range, wherein intrinsic white light emission is achieved from self-organized InGaN quantum dots embedded in defect-free GaN nanowires on a single chip. Through detailed temperature-dependent electroluminescence and simulation studies, it is revealed that electron leakage …
Authors
Nguyen HPT; Cui K; Zhang S; Djavid M; Korinek A; Botton GA; Mi Z
Journal
Nano Letters, Vol. 12, No. 3, pp. 1317–1323
Publisher
American Chemical Society (ACS)
Publication Date
March 14, 2012
DOI
10.1021/nl203860b
ISSN
1530-6984