Oxide Phosphor Green EL on Glass Substrates Journal Articles

abstract

• AbstractA new thin film EL device based on green emitting oxide phosphor Zn2Si.5Ge.5O4:Mn has been realized on glass and quartz substrates. The device relies on thin film dielectrics which are sputter deposited. Maximum processing temperature for the device is 700°C and excellent brightness of over 180 cd/m2 at 60 Hz may be achieved at 50 V above threshold. Typical device structures and their performance will be described.

authors

• Kitai, Adrian Howard
• Cook, KA
• Zhang, Y
• Ho, D
• Stevanovic, DV
• Huang, Z
• Nakua, A

status

• published 

publication date

• May 1999

published in

• Digest of Technical Papers - SID International Symposium  Journal

keywords

• 34 Chemical Sciences
• 40 Engineering
• 4016 Materials Engineering

Digital Object Identifier (DOI)

• 10.1889/1.1834093

start page

• 596

end page

• 597

volume

• 30

issue

• 1