Oxide Phosphor Green EL on Glass Substrates

Abstract A new thin film EL device based on green emitting oxide phosphor Zn 2 Si .5 Ge. 5 O 4 :Mn has been realized on glass and quartz substrates. The device relies on thin film dielectrics which are sputter deposited. Maximum processing temperature for the device is 700°C and excellent brightness of over 180 cd/m 2 at 60 Hz may be achieved at 50 V above threshold. Typical device structures and their performance will be described.