Erbium-Doped Tellurium-Oxide-Coated Silicon Nitride Waveguide Amplifiers Conferences uri icon

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abstract

  • We demonstrate 5 dB of net gain at 1558 nm in a 6.7 cm long erbium-doped tellurium- oxide-coated silicon nitride waveguide, in a process compatible with silicon nitride photonic integrated circuits.

authors

  • Frankis, Henry C
  • Mbonde, Hamidu M
  • Bonneville, Dawson B
  • Zhang, Chenglin
  • Mateman, Richard
  • Leinse, Arne
  • Bradley, Jonathan

publication date

  • 2020