GaN based Dual-Metal Gate Stack Engineered Junctionless-Surrounding-Gate (DMSEJSG) MOSFET for High Power Applications

Here, GaN based Dual Metal Stack Engineered Junctionless-Surrounding Gate MOSFET (DMSEJSG) has been explored for higher frequency applications. We have analyzed various parameters namely drain currents, transconductance, output conductance, Transconductance Generation Factor (TGF), Maximum Transducer Power Gain, Current Gain, Gate Capacitance and Cut off Frequency. These parameters have been analyzed and compared with Silicon based Dual-Metal Gate-Stack Engineered Junctionless Surrounding-Gate MOSFET and Junctionless-Surrounding-Gate MOSFET and also GaN based Junctionless-SurroundingGate MOSFET. It is so found GaN based DMSEJSG-MOSFET shows improved performance along with a higher cut off frequency for industrial and aeronautical applications.