Conference
GaN based Dual-Metal Gate Stack Engineered Junctionless-Surrounding-Gate (DMSEJSG) MOSFET for High Power Applications
Abstract
Here, GaN based Dual Metal Stack Engineered Junctionless-Surrounding Gate MOSFET (DMSEJSG) has been explored for higher frequency applications. We have analyzed various parameters namely drain currents, transconductance, output conductance, Transconductance Generation Factor (TGF), Maximum Transducer Power Gain, Current Gain, Gate Capacitance and Cut off Frequency. These parameters have been analyzed and compared with Silicon based Dual-Metal …
Authors
Goel A; Rewari S; Verma S; Gupta RS
Volume
00
Pagination
pp. 1-4
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
December 15, 2019
DOI
10.1109/indicon47234.2019.9030261
Name of conference
2019 IEEE 16th India Council International Conference (INDICON)