Conference
Erbium-Doped Tellurium-Oxide-Coated Silicon Nitride Waveguide Amplifiers
Abstract
We demonstrate 5 dB of net gain at 1558 nm in a 6.7 cm long erbium-doped tellurium- oxide-coated silicon nitride waveguide, in a process compatible with silicon nitride photonic integrated circuits.
Authors
Frankis HC; Mbonde HM; Bonneville DB; Zhang C; Mateman R; Leinse A; Bradley JDB
Publisher
Optica Publishing Group
DOI
10.1364/cleo_si.2020.sw3f.2
Name of conference
Conference on Lasers and Electro-Optics