Design optimization for 25Gbps DML InAlGaAs/InP...

Design optimization for 25Gbps DML InAlGaAs/InP SL-MQW laser diode

Abstract

A full physics based model has been exploited to systematically study the modulation bandwidth of the directly modulated strained-layer multiple quantum well (SL-MQW) laser. The major parameters of the active region are optimized to achieve the maximum modulation bandwidth under an ambient temperature ranging from 25°C to 85°C.

Authors

Ke C; Li X; Xi Y

Volume

2016-November

Publication Date

November 1, 2016

Conference proceedings

Asia Communications and Photonics Conference ACP

ISSN

2162-108X

Associated Experts

Xun Li

Professor, Faculty of Engineering

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