Influence of Different Carbon Precursors on Optical and Electrical Properties of Silicon Carbonitride Thin Films

We investigate the thin film properties of the amorphous hydrogenated silicon carbonitride (a-SiCN:H) deposited by the electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD) technique. The elemental composition, film density, and complex refractive index of the SiCN films were analyzed as functions of hydrocarbon precursors’ (acetylene (C2H2) or methane (CH4)) flow rates. The difference in the reactivity and hydrogen content of the carbon precursors influence the thin film properties. The highest breakdown voltage obtained from our thin films was 29 V. Preliminary results of nanoindentation of the thin films are also presented in order to compare the hardness performance of the thin films obtained by different carbon sources.