An analytical method to determine MOSFET's high frequency noise parameters from 50-Ω noise figure measurements

An analytical method, along with closed-form solutions, for extracting MOSFET's RF noise parameters is presented. This method extracts the minimum noise figure, NFmin, equivalent noise resistance, Rn, and optimum source admittance Yopt, of MOSFET directly from a single high frequency 50-Ω noise figure measurement. This method can accurately predict the noise parameters of deep-submicron MOSFETs.