Spatially-resolved EELS and EDS Analysis of HfOxNy Gate Dielectrics Deposited by MOCVD using [(C2H5)2N]4Hf with NO and O2 Conference Paper uri icon

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abstract

  • Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

authors

  • Wu, X
  • Couillard, M
  • Lee, M-S
  • Chen, J-H
  • Botton, Gianluigi
  • Landheer, D
  • Lu, Z-H
  • Ng, W-T
  • Chao, T-S

publication date

  • August 2004