MEASUREMENT IN DIFFUSED LAYERS OF MINORITY CARRIER RECOMBINATION-GENERATION AND TRANSPORT AND OF SURFACE PROPERTIES.

A new test structure fabricated with standard planar processing is presented. It consists of an MOS capacitor used as an inversion charge emitter and a p-n junction collector. The minority carrier lifetime, the energy level of the recombination centers and the minority carrier transport properties in shallow heavily doped layers can be determined from the direct observation of collected inversion charge. In addition, the oxide and interface charge stability as well as the interface surface state density can be accurately measured.