Conference
DEVELOPMENT AND OPTIMIZATION OF A 1 eV (GaIn)(NAs) SOLAR CELL
Abstract
(GaIn)(NAs) lattice matched to GaAs and Ge and having a 1 eV bandgap is a promising candidate for future space and terrestrial multi-junction solar cell structures. The present paper summarizes results of structural and optical characteristics of this metastable material system. It is shown, that photoluminescence (PL) intensity can be taken as a measure of improving minority carrier characteristics in solar cell devices. A direct correlation …
Authors
Volz K; Szesney A; Jurecka C; Nemeth I; Rubel O; Stolz W; Welser E; Oliva E; Dimroth F; Bett AW
Pagination
pp. 001015-001019
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
June 1, 2009
DOI
10.1109/pvsc.2009.5411194
Name of conference
2009 34th IEEE Photovoltaic Specialists Conference (PVSC)