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Optimization of Stress-Induced Pockels Effect in...
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Optimization of Stress-Induced Pockels Effect in Silicon Waveguides for Optical Modulators

Abstract

A method for the optimization of strain-induced Pockels effect in silicon waveguides is proposed. We introduce a new figure of merit and show a 35% enhancement in FOM compared to most efficient reported devices.

Authors

Aleali A; Xu D; Schmid JH; Cheben P; Ye WN

Pagination

pp. 109-110

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication Date

August 1, 2013

DOI

10.1109/group4.2013.6644453

Name of conference

10th International Conference on Group IV Photonics
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