Conference
Al2O3: Er3+ as a New Platform for Active Integrated Optics
Abstract
Recently, we have demonstrated internal net gain with a bandwidth of 80 nm (1500–1580 nm) and 1533 nm peak gain of 2.0 dB/cm in Al2O3: Er3+ channel waveguides which were sputtered on silicon substrates and subsequently reactive ion etched. Based on measured spectroscopic parameters, rate-equation simulations predict gain of > 20 dB throughout the entire telecom C-band for optimized waveguide lengths. Data transmission of 40 Gbit/s has been …
Authors
Pollnau M; Bradley JDB; Agazzi L; Bernhardi E; Ay F; Worhoff K; Ridder RMD
Pagination
pp. 1-4
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication Date
June 1, 2009
DOI
10.1109/icton.2009.5185260
Name of conference
2009 11th International Conference on Transparent Optical Networks