Al2O3: Er3+ as a New Platform for Active Integrated Optics

Recently, we have demonstrated internal net gain with a bandwidth of 80 nm (1500–1580 nm) and 1533 nm peak gain of 2.0 dB/cm in Al2O3: Er3+ channel waveguides which were sputtered on silicon substrates and subsequently reactive ion etched. Based on measured spectroscopic parameters, rate-equation simulations predict gain of > 20 dB throughout the entire telecom C-band for optimized waveguide lengths. Data transmission of 40 Gbit/s has been obtained. Grating structures for on-chip integrated cavities and distributed-feedback lasers have been fabricated in this material and are currently under investigation.