Erbium-Doped Laser with Multi-segmented Silicon...

Erbium-Doped Laser with Multi-segmented Silicon Nitride Structure

Abstract

We report on DFB and DBR lasers formed from a wavelength insensitive multisegmented silicon nitride waveguide. Using a five-segment waveguide, we obtain lasing in erbium-doped DBR (-3.6 dBm) and DFB (-7.3 dBm) cavities.

Authors

Purnawirman; Hosseini ES; Baldycheva A; Sun J; Bradley JDB; Adam TN; Leake G; Coolbaugh D; Watts MR

Pagination

pp. 1-3

Publication Date

March 1, 2014

DOI

10.1109/ofc.2014.6887185

Conference proceedings

OFC 2014

Associated Experts

Jonathan Bradley

Associate Professor, Faculty of Engineering

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Fields of Research (FoR)

51 Physical Sciences 40 Engineering 4018 Nanotechnology

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