White organic light-emitting diodes using P- and N- type emissive host materials with single red dopant in emitting layer

WOLEDs were fabricated using p-, n-type host materials and red dopant material with different structures of the emitting layer. The best performance out of devices was achieved when double emissive layer consists of BAlq and DPVBi. Luminous efficiency and CIExy of WOLED were 7.13cd/A at 50mA/cm² and (0.34,0.33) at 8V.