Conference
The Influence of Structural Ordering on Luminescence from Nitride- and Oxynitride-Passivated Silicon Nanoclusters
Abstract
Luminescent silicon nanoclusters have been formed in silicon-rich silicon nitride and silicon-rich silicon oxynitride films grown using inductively coupled plasma chemical vapour deposition. The luminescent properties and electronic structure of the films have been investigated through ultraviolet-excited photoluminescence and synchrotron-based X-ray absorption spectroscopy experiments at the Si K- and L3,2-edges, respectively. In the …
Authors
Wilson PR; Roschuk T; Dunn K; Betti M; Wojcik J; Mascher P
Volume
19
Pagination
pp. 19-28
Publisher
The Electrochemical Society
Publication Date
May 15, 2009
DOI
10.1149/1.3116894
Conference proceedings
ECS Transactions
Issue
8
ISSN
1938-5862