Conference
Formation of and Light Emission from Si Nanocrystals Embedded in Amorphous Silicon Oxides
Abstract
The formation of Si-nc embedded in amorphous Si oxides promoted by thermal annealing of SiyO1-y films (y=0.34-0.45) fabricated by plasma enhanced chemical vapor deposition is examined by X- ray diffraction and electron microscopy. UV and synchrotron radiation excited photoluminescence from the obtained structures is also studied and its origin elucidated
Authors
Comedi DM; Zalloum O; Blakie D; Wojcik J; Mascher P
Volume
3
Pagination
pp. 3-8
Publisher
The Electrochemical Society
Publication Date
October 20, 2006
DOI
10.1149/1.2392914
Conference proceedings
ECS Transactions
Issue
11
ISSN
1938-5862