Formation of and Light Emission from Si Nanocrystals Embedded in Amorphous Silicon Oxides

The formation of Si-nc embedded in amorphous Si oxides promoted by thermal annealing of SiyO1-y films (y=0.34-0.45) fabricated by plasma enhanced chemical vapor deposition is examined by X- ray diffraction and electron microscopy. UV and synchrotron radiation excited photoluminescence from the obtained structures is also studied and its origin elucidated