Formation of and Light Emission from Si Nanocrystals Embedded in Amorphous Silicon Oxides Conferences uri icon

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abstract

  • The formation of Si-nc embedded in amorphous Si oxides promoted by thermal annealing of SiyO1-y films (y=0.34-0.45) fabricated by plasma enhanced chemical vapor deposition is examined by X- ray diffraction and electron microscopy. UV and synchrotron radiation excited photoluminescence from the obtained structures is also studied and its origin elucidated

authors

  • Comedi, David M
  • Zalloum, Othman
  • Blakie, Darren
  • Wojcik, Jacek
  • Mascher, Peter

publication date

  • October 20, 2006