Luminescence from Si Nanoclusters Formed in Silicon Oxide and Silicon Nitride Based Materials

Si nanoclusters embedded in two different dielectric matrices, silicon oxide and silicon nitride, have been formed through annealing of Si-rich silicon oxide (SRSO) and Si-rich silicon nitride (SRSN) thin films. The light emitting properties of these materials have been analyzed through room temperature UV-excited photoluminescence (PL) experiments. Features of the PL spectra from both types are presented and the nature of light emission from Si-nanoclusters is discussed on the basis of the results from these two different host environments.