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Comparison of SiOxNy thin films deposited by...
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Comparison of SiOxNy thin films deposited by ECR-PECVD at 2.4 and 3.0 mTorr total pressure

Authors

Wojcik J

Publisher

SPIE, the international society for optics and photonics

Publication Date

August 29, 2017

DOI

10.1117/12.2283971

Name of conference

Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging
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