Subpicosecond carrier lifetime in beryllium-doped InGaAsP grown by He-plasma-assisted molecular beam epitaxy

By combining He-plasma-assisted growth with Be doping, carrier lifetime can be further reduced to subpicosecond. With moderate doping concentrations, a relatively sharp absorption edge is maintained. Five 2-μm-thick InGaAsP samples grown on InP substrates were investigated and compared. Carrier lifetimes were obtained by the standard pump-probe measurements.