Stress-dependent behavior of InGaAsP semiconductor diode lasers.
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Overview
Overview
abstract
The effects of tension and compression applied to unbonded InGaAsP
semiconductor diode lasers have been studied. A theoretical calculation of the stress
distribution within the laser and an analysis of the effect of strain on optical gain in
semiconductors is presented. The observed dependence of threshold, wavelength,
and polarization of the laser output on the applied stress is explained in terms of the
strain dependence of the valence-band wavefunctions.
The polarization behaviour is found to be related to thermal stress
and the structure of the device. A technique has been developed to measure the
thermal stress induced by current heating at the 105 dynes/cm2 level.
The effect of stress on the below threshold behaviour of the lasers was
investigated. The results are consistent with the strain dependence of the TE and
TM mode gains.
