Correlation between stress distributions on the facet and along the active region in 1.3-μm semiconductor diode lasers

The correlation between stress measured on the facet and along the active region employing polarization-resolved electroluminescence is presented. It was observed that stress is uniformly distributed on the laser stripe and stress pattern on the facet also represents the stress along laser cavity. The knowledge of stress distribution on semiconductor diode lasers is important in determining the laser characteristics.