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Low-energy electron scattering by silane (SiH4)
Journal article

Low-energy electron scattering by silane (SiH4)

Abstract

Vibrational and electronic excitation of SiH4 has been investigated for low-energy electrons in the energy range 1-25 eV. Vibrational excitation of the X 1A1 ground electronic state is dominated by a 1 eV broad shape resonance around 2.1 eV, which induces excitation of the n nu 1,3 vibrational series (Si1H stretching motion) and of the n nu 1,3 nu 2,4 series (Si1H stretching with one quantum of angular deformation). Valence electronic excitation is obtained in small-momentum-transfer conditions (0.2

Authors

Tronc M; Hitchcock A; Edard F

Journal

Journal of Physics B Atomic Molecular and Optical Physics, Vol. 22, No. 8,

Publisher

IOP Publishing

Publication Date

April 28, 1989

DOI

10.1088/0953-4075/22/8/005

ISSN

0953-4075

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