Shallow Extension Engineered Dual Material Surrounding Gate (SEE-DM-SG) MOSFET for improved gate leakages, analysis of circuit and noise performance

The leakages in off state, particularly Gate Induced Drain Leakage (GIDL) has been addressed and reduced by proposing a Shallow Extension Engineered Dual Material Surrounding Gate (SEE-DM-SG) MOSFET. The shallow extensions create an insulating layer, which acts as a diffusion stopper and thereby suppresses the off state leakages. It is done by comparing the off-state performance of SEE-DM-SG MOSFET with Dual Metal Surrounding Gate (DM-SG) …