Conference
Nature and dynamics of carrier escape from InAs/GaAs quantum dots
Abstract
Abstract In this paper we describe a theoretical model for the dynamics of electrons and holes in InAs/GaAs quantum dots. The key process governing the dynamics is the carrier exchange between quantum dots and the surrounding barriers. We report on two different models that differ in the nature of the carrier exchange mechanism. In the first model electrons and holes are treated as independent carriers, while in the alternative model the …
Authors
Rubel O; Dawson P; Baranovskii SD; Pierz K; Thomas P; Göbel EO
Volume
3
Pagination
pp. 2397-2401
Publisher
Wiley
Publication Date
August 2006
DOI
10.1002/pssc.200668100
Conference proceedings
physica status solidi (c)
Issue
7
ISSN
1862-6351