Non‐radiative recombination of optical excitations in (GaIn)(NAs) quantum wells

Abstract We present results of experimental and theoretical studies of thermal quenching of the photoluminescence intensity in (GaIn)(NAs)/GaAs quantum wells after various postgrowth treatments. The experimental data are well described in the framework of a phenomenological model, if thermal emission of excitons out of localized states into delocalized states at the mobility edge prior to their non‐radiative recombination is taken into account. …