Measurements of resistivity and Hall coefficient as a function of magnetic field (0–3.2 Wb/m2) and temperature (25–200 C) have been made on samples of Te-doped GaSb. The results have been analyzed in terms of a two-conduction-band model with minima at Γ1 and L1, using the method reported by Kwan et al. This analysis yields a value for the Γ1–L1 band separation of 0.097 ± 0.002 eV, when linearly extrapolated to 0 K, and a temperature coefficient of −3.4 × 10−5 eV/K. The measurements of the Hall coefficient at 0.87 Wb/m2 and the zero-field resistivity have been extended to 360 C. These data have been analyzed using a four-band model (Γ1, L1X1, and Γ15 V), thus giving the temperature dependence of electron mobility in the Γ1 and L1 bands. The electron mobility values for the L1 band have then been fitted to a semiempirical relation, obtained by assuming appropriate scattering mechanisms.